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2SJ537 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SJ537 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SJ537 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L 2 −π−MOSVI) 2SJ537 Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 3.5 S (typ.) Low leakage current : IDSS = −100 μA (VDS = −50 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS −50 V Drain−gate voltage (RGS = 20 kΩ) VDGR −50 V Gate−source voltage VGSS ±20 V DC (Note 1) ID −5 A Drain current Pulse (Note 1) IDP −15 A Drain power dissipation PD 0.9 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient Rth (ch−a) 138 °C / W Note 1: Please use devices on condition that the channel temperature is below 150°C. This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1C Weight: 0.36 g (typ.) |
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