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2SJ525 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SJ525
Description  Silicon P Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ525 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SJ525
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = −30 V, VGS = 0 V
−100
μA
Drain−source breakdown
voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−30
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −2.5 A
0.17
0.2
Drain−source ON resistance
RDS (ON)
VGS = −10 V, ID = −2.5 A
0.1
0.12
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −2.5 A
2.0
4.5
S
Input capacitance
Ciss
850
Reverse transfer capacitance
Crss
250
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
330
pF
Rise time
tr
50
Turn−on time
ton
75
Fall time
tf
20
Switching time
Turn−off time
toff
95
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
27
Gate−source charge
Qgs
19
Gate−drain (“miller”) charge
Qgd
VDD ≈ −24 V, VGS = −10 V,
ID = −5 A
8
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−5
A
Pulse drain reverse current
(Note 1)
IDRP
−20
A
Forward voltage (diode)
VDSF
IDR = −5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
60
ns
Reverse recovery charge
Qrr
IDR = −5 A, VGS = 0 V
dIDR / dt = 50 A / μs
56
nC
Marking
J525
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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