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2SK1381 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SK1381 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 6 page 2SK1381 2004-07-06 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSIII) 2SK1381 Relay Drive, Motor Drive and DC−DC Converter Applications 4-V gate drive Low drain−source ON resistance : RDS (ON) = 25 mΩ (typ.) High forward transfer admittance : |Yfs| = 33 S (typ.) Low leakage current : IDSS = 100 μA (max) (VDS = 100 V) Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain−source voltage VDSS 100 V Drain−gate voltage (RGS = 20 kΩ) VDGR 100 V Gate−source voltage VGSS ±20 V DC (Note 1) ID 50 Drain current Pulse (Note 1) IDP 200 A Drain power dissipation (Tc = 25°C) PD 150 W Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 0.833 °C / W Thermal resistance, channel to ambient Rth (ch−a) 50 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. This transistor is an electrostatic-sensitive device. Please handle with caution. Unit: mm 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE JEDEC ― JEITA ― TOSHIBA 2-16C1B Weight: 4.6 g (typ.) |
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