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2SJ440 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SJ440 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 3 page 2SJ440 2006-11-16 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VDS = 0, VGS = ±20 V ― ― ±0.5 μA Drain-source breakdown voltage V (BR) DSS ID = −10 mA, VGS = 0 −180 ― ― V Gate-source cut-off voltage VGS (OFF) (Note 3) VDS = −10 V, ID = −0.1 A −1.4 ― −2.8 V Drain-source saturation voltage VDS (ON) ID = −6 A, VGS = −10 V ― −1.5 −5.0 V Forward transfer admittance |Yfs| VDS = −10 V, ID = −3 A ― 4.0 ― S Input capacitance Ciss VDS = −30 V, VGS = 0, f = 1 MHz ― 1300 ― pF Output capacitance Coss VDS = −30 V, VGS = 0, f = 1 MHz ― 350 ― pF Reverse transfer capacitance Crss VDS = −30 V, VGS = 0, f = 1 MHz ― 200 ― pF Note 3: VGS (OFF) classification Y: −1.4 to −2.8 This transistor is the electrostatic-sensitive device. Plese handle with caution. Marking J440 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Part No. (or abbreviation code) |
Numéro de pièce similaire - 2SJ440_07 |
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Description similaire - 2SJ440_07 |
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