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2SJ440 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SJ440
Description  Audio Frequency Power Amplifier Application
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ440 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

  2SJ440_07 Datasheet HTML 1Page - Toshiba Semiconductor 2SJ440_07 Datasheet HTML 2Page - Toshiba Semiconductor 2SJ440_07 Datasheet HTML 3Page - Toshiba Semiconductor  
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2SJ440
2006-11-16
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VDS = 0, VGS = ±20 V
±0.5
μA
Drain-source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0
−180
V
Gate-source cut-off voltage
VGS (OFF)
(Note 3)
VDS = −10 V, ID = −0.1 A
−1.4
−2.8
V
Drain-source saturation voltage
VDS (ON)
ID = −6 A, VGS = −10 V
−1.5
−5.0
V
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −3 A
4.0
S
Input capacitance
Ciss
VDS = −30 V, VGS = 0, f = 1 MHz
1300
pF
Output capacitance
Coss
VDS = −30 V, VGS = 0, f = 1 MHz
350
pF
Reverse transfer capacitance
Crss
VDS = −30 V, VGS = 0, f = 1 MHz
200
pF
Note 3: VGS (OFF) classification Y: −1.4 to −2.8
This transistor is the electrostatic-sensitive device. Plese handle with caution.
Marking
J440
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)


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