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2SJ402 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SJ402
Description  DC−DC Converter, Relay Drive and Motor Drive Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ402 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SJ402
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
−π−MOSV)
2SJ402
DC−DC Converter, Relay Drive and Motor Drive
Applications
4-V gate drive
Low drain−source ON resistance
: RDS (ON) = 29 mΩ (typ.)
High forward transfer admittance
: |Yfs| = 23 S (typ.)
Low leakage current : IDSS = −100 μA (max) (VDS = −60 V)
Enhancement mode
: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−60
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
−60
V
Gate−source voltage
VGSS
±20
V
DC
(Note 1)
ID
−30
A
Drain current
Pulse(Note 1)
IDP
−120
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
936
mJ
Avalanche current
IAR
−30
A
Repetitive avalenche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 747 μH, RG = 25 Ω,
IAR = −30 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
JEITA
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)


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