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2SJ360 Fiches technique(PDF) 2 Page - Toshiba Semiconductor

No de pièce 2SJ360
Description  Chopper Regulator, DC−DC Converter and Motor Drive Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ360 Fiches technique(HTML) 2 Page - Toshiba Semiconductor

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2SJ360
2006-11-15
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
μA
Drain cut−off current
IDSS
VDS = −60 V, VGS = 0 V
−100
μA
Drain−source breakdown voltage
V (BR) DSS
ID = −10 mA, VGS = 0 V
−60
V
Gate threshold voltage
Vth
VDS = −10 V, ID = −1 mA
−0.8
−2.0
V
VGS = −4 V, ID = −0.5 A
0.86
1.2
Drain−source ON resistance
RDS (ON)
VGS = −10 V, ID = −0.5 A
0.55
0.73
Forward transfer admittance
|Yfs|
VDS = −10 V, ID = −0.5 A
0.5
0.9
S
Input capacitance
Ciss
155
Reverse transfer capacitance
Crss
20
Output capacitance
Coss
VDS = −10 V, VGS = 0 V, f = 1 MHz
75
pF
Rise time
tr
17
Turn−on time
ton
20
Fall time
tf
20
Switching time
Turn−off time
toff
100
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
6.5
Gate−source charge
Qgs
4.5
Gate−drain (“miller”) charge
Qgd
VDD ≈ −48 V, VGS = −10 V, ID = −1 A
2.0
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
−1
A
Pulse drain reverse current
(Note 1)
IDRP
−3
A
Forward voltage (diode)
VDSF
IDR = −1 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
50
ns
Reverse recovery charge
Qrr
IDR = −1 A, VGS = 0 V
dIDR / dt = 50 A / μs
50
μC
Marking
Z
8
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.


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