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2SJ201 Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SJ201
Description  High-Power Amplifier Application
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SJ201 Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SJ201
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ201
High-Power Amplifier Application
High breakdown voltage
: VDSS = −200 V
High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
Complementary to 2SK1530
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
−200
V
Gate−source voltage
VGSS
±20
V
Drain current
(Note 1)
ID
−12
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)


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