2SJ108

2007-11-01

1

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type

2SJ108

Low Noise Audio Amplifier Applications

• Recommended for first stages of EQ amplifiers and MC head

amplifiers.

• Complementary to 2SK370

• Small package

Characteristics

Symbol

Rating

Unit

Gate-drain voltage

25

V

Gate current

−10

mA

Drain power dissipation

200

mW

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Note:

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate cut-off current

⎯

⎯

1.0

nA

Gate-drain breakdown voltage

25

⎯

⎯

V

Drain current

(Note)

−2.6

⎯

−20

mA

Gate-source cut-off voltage

0.15

⎯

2.0

V

Forward transfer admittance

8

22

⎯

mS

Input capacitance

⎯

105

⎯

pF

Reverse transfer capacitance

⎯

32

⎯

pF

NF (1)

f

= 10 Hz

⎯

1.0

10

Noise figure

NF (2)

f

= 1 kHz

⎯

0.5

2

dB

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-4E1C

Weight: 0.13 g (typ.)