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2SJ106 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SJ106 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SJ106 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) • Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA) • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDS 50 V Gate current IG −10 mA Drain power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate cut-off current IGSS VGS = 30 V, VDS = 0 ⎯ ⎯ 1.0 nA Gate-drain breakdown voltage V (BR) GDS VDS = 0, IG = 100 μA 50 ⎯ ⎯ V Drain current IDSS (Note) VDS = −10 V, VGS = 0 −1.2 ⎯ −14 mA Gate-source cut-off voltage VGS (OFF) VDS = −10 V, ID = −0.1 μA 0.3 ⎯ 6.0 V Forward transfer admittance ⎪Yfs⎪ VDS = −10 V, VGS = 0, f = 1 kHz 1.0 4.0 ⎯ mS Drain-source on resistance RDS (ON) VDS = −10 mV, VGS = 0 IDSS = −5 mA ⎯ 270 ⎯ Ω Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz ⎯ 18 ⎯ pF Reverse transfer capacitance Crss VDG = −10 V, ID = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Note: IDSS classification Y: −1.2~−3.0 mA, GR (G): −2.6~−6.5 mA, BL (L): −6~−14 mA Marking Unit: mm JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1B Weight: 0.012 g (typ.) |
Numéro de pièce similaire - 2SJ106_07 |
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Description similaire - 2SJ106_07 |
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