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2SC1627A Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce 2SC1627A
Description  Silicon NPN Epitaxial Type (PCT Process)
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC1627A Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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2SC1627A
2006-11-09
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC1627A
Driver-Stage Amplifier Applications
Voltage Amplifier Applications
• Complementary to 2SA817A.
• Driver-stage applications for 30- to 35-watt amplifiers.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
80
V
Collector-emitter voltage
VCEO
80
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
40
mA
Collector power dissipation
PC
800
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)


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