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2SC3619 Fiches technique(PDF) 4 Page - Toshiba Semiconductor

No de pièce 2SC3619
Description  Silicon NPN Triple Diffused Type (PCT Process) High-Voltage Switching and Amplifier Applications
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC3619 Fiches technique(HTML) 4 Page - Toshiba Semiconductor

  2SC3619_06 Datasheet HTML 1Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 2Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 3Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 4Page - Toshiba Semiconductor 2SC3619_06 Datasheet HTML 5Page - Toshiba Semiconductor  
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2SC3619
2006-11-09
4
Base-emitter voltage VBE (V)
IC – VBE
Safe Operating Area
Collector current IC (mA)
fT – IC
Collector-base voltage VCB (V)
Cob – VCB
10
30
Common emitter
Ta = 25°C
500
0.3
300
50
30
10
1
3
10
100
VCE = 20 V
5
100
100
0
0.2
80
20
0.4
0.6
0.8
Common emitter
VCE = 10 V
25
1.0
Ta = 100°C
60
40
1.2
−25
Collector-emitter voltage VCE (V)
*: Single nonrepetitive pulse
Ta = 25°C
Curves must be derated linearly with
increase in temperature.
2
3
5
10
30
50
100
300
30
100
IC max (continuous)
IC max (pulsed)*
1 ms*
10 ms*
100 ms*
DC operation
Ta = 25°C
10
300
VCEO
max
500 ms*
300 μs*
100
IE = 0
f = 1 MHz
Ta = 25°C
50
1
30
5
3
1
3
10
30
300
10


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