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2SC3125 Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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2SC3125 Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 4 page 2SC3125 2007-11-01 1 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3125 TV Final Picture IF Amplifier Applications • Good linearity of fT Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 4 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 30 V, IE = 0 ⎯ ⎯ 0.1 μA Emitter cut-off current IEBO VEB = 3 V, IC = 0 ⎯ ⎯ 0.1 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 25 ⎯ ⎯ V DC current gain hFE VCE = 10 V, IC = 10 mA 20 70 200 Collector-emitter VCE (sat) ⎯ ⎯ 0.2 Saturation voltage Base-emitter VBE (sat) IC = 15 mA, IB = 1.5 mA ⎯ ⎯ 1.5 V Collector output capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz ⎯ 1.1 1.6 pF Collector-base time constant Cc・rbb’ VCB = 10 V, IC = 1 mA, f = 30 MHz ⎯ ⎯ 25 ps Transition frequency fT VCE = 10 V, IC = 10 mA 250 600 ⎯ MHz Marking Unit: mm JEDEC ― JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) |
Numéro de pièce similaire - 2SC3125_07 |
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Description similaire - 2SC3125_07 |
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