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TPD7101F Fiches technique(PDF) 1 Page - Toshiba Semiconductor

No de pièce TPD7101F
Description  2 channel High-Side N-ch Power MOSFET Gate Driver
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD7101F Fiches technique(HTML) 1 Page - Toshiba Semiconductor

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TPD7101F
2006-10-31
1
TOSHIBA Intelligent Power Device
Silicon Monolithic Power MOS Integrated Circuit
TPD7101F
2 channel High-Side N-ch Power MOSFET Gate Driver
The TPD7101F is a 2 channel high-side N-ch power MOSFET gate driver.
This IC contains a power MOSFET driver and power MOSFET protective
and diagnostic functions, allowing easy configuration of a high-side switch
for large-current applications.
Features
The large-current charge pump allows for fast switching
Power MOSFET protective and diagnostic functions are built-in.
Protective functions: Overvoltage
(internal device protection), overcurrent
protection, VDD voltage drop detection
*
Overvoltage is internally limited. No detection or shutdown functions
are included.
Diagnostic functions: Overcurrent
The level of overcurrent detection can set by external resistor.
Package: SSOP-24 (300 mil) with embossed-tape packing
Due to its MOS structure, this product is sensitive to static electricity. Handle with care.
Pin Assignment
Marking
Weight: 0.29g(typ.)
TPD710 1F
A dot indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
Lot No.


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