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TPCP8001-H Fiches technique(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8001-H Fiches technique(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCP8001-H 2006-05-29 1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCP8001-H High Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 3.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) • High forward transfer admittance: |Yfs| = 16 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V DC (Note 1) ID 7.2 Drain current Pulsed (Note 1) IDP 28.8 A Drain power dissipation (t = 5 s) (Note 2a) PD 1.68 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.84 W Single-pulse avalanche energy (Note 3) EAS 33.6 mJ Avalanche current IAR 7.2 A Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.066 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3V1K Weight: 0.017 g (typ.) Circuit Configuration Marking (Note 5) 1 2 3 4 8 7 6 5 8 7 6 5 1 2 3 4 8001H ※ Lot No. 0.33±0.05 0.28+0.1 -0.11 1.12+0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12+0.13 -0.12 0.28+0.1 -0.11 1.Source 5.Drain 2.Source 6.Drain 3.Source 7.Drain 4.Gate 8.Drain |
Numéro de pièce similaire - TPCP8001-H |
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Description similaire - TPCP8001-H |
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