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STP19NF20 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STP19NF20 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 16 page February 2007 Rev 4 1/16 16 ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application Internal schematic diagram General features Type VDSS RDS(on) ID pw STB19NF20 200V <0.16 Ω 15A 90W STF19NF20 200V <0.16 Ω 15A 25W STP19NF20 200V <0.16 Ω 15A 90W 1 2 3 1 3 TO-220 D²PAK 1 2 3 TO-220FP STB19NF20 - STF19NF20 STP19NF20 N-channel 200V - 0.15 Ω - 15A - TO-220 - D2PAK - TO-220FP MESH OVERLAY™ Power MOSFET www.st.com Order codes Part number Marking Package Packaging STB19NF20 19NF20 D²PAK Tape & reel STF19NF20 19NF20 TO-220FP Tube STP19NF20 19NF20 TO-220 Tube |
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