CXK79M72C164GB datasheet(10/28 Pages) SONY

No de pièce	CXK79M72C164GB

Description	18Mb 1x1Dp HSTL High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)

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Fabricant	SONY [Sony Corporation]

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SONY®

ΣRAM

CXK79M72C164GB / CXK79M36C164GB

Preliminary

18Mb 1x1Dp, HSTL, rev 1.3

10 / 28

June 19, 2003

•DC Recommended Operating Conditions

(VSS =0V, TA =0 to 70

oC)

1. The peak-to-peak AC component superimposed on VREF may not exceed 5% of the DC component.

2. VIH (max) AC = VDDQ + 0.9V for pulse widths less than one-quarter of the cycle time (tCYC/4).

3. VIL (min) AC = -0.9V for pulse widths less than one-quarter of the cycle time (tCYC/4).

4. If only the CK Input Clock is used, CK must be connected to VREF, and CK must meet the VIH and VIL parameters.

5. VKIN,VDIF,and VCM apply only if differential Input Clocks are used.

Parameter

Symbol

Min

Typ

Max

Units

Notes

Supply Voltage

VDD

1.7

1.8

1.95

V

Output Supply Voltage

VDDQ

1.4

---

VDD

V

Input Reference Voltage

VREF

VDDQ/2 - 0.1

VDDQ/2

VDDQ/2 + 0.1

V

1

Input High Voltage (Address, Control, Data)

VIH

VREF +0.2

---

VDDQ +0.3

V

2

Input Low Voltage (Address, Control, Data)

VIL

-0.3

---

VREF -0.2

V

3

Input High Voltage (EP2, EP3, MCH)

VMIH

VREF +0.3

---

VDD +0.3

V

Input Low Voltage (EP2, EP3, MCL)

VMIL

-0.3

---

VREF -0.3

V

Clock Input Signal Voltage

VKIN

-0.3

---

VDDQ + 0.3

V

2,3,4,5

Clock Input Differential Voltage

VDIF

0.4

---

VDDQ +0.6

V

5

Clock Input Common Mode Voltage

VCM

VDDQ/2 - 0.1

VDDQ/2

VDDQ/2 + 0.1

V

5

Numéro de pièce similaire - CXK79M72C164GB

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Sony Corporation	CXK79M72C165GB	450Kb / 29P	18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)

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Description similaire - CXK79M72C164GB

Fabricant	No de pièce	Fiches technique	Description
Sony Corporation	CXK79M72C165GB	450Kb / 29P	18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
	CXK79M36C162GB	400Kb / 25P	18Mb 1x2Lp HSTL High Speed Synchronous SRAMs (512Kb x 36)
	CXK77P36E160GB	257Kb / 25P	16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18)
GSI Technology	GS816218B	1Mb / 41P	1M x 18, 512K x 36, 256K x 72 18Mb Sync Burst SRAMs
Integrated Silicon Solu...	IS61NSCS25672	182Kb / 32P	RAM 256K x 72, 512K x 36 18Mb Synchronous SRAM
GSI Technology	GS816272C	1Mb / 31P	256K x 72 18Mb Sync Burst SRAMs
	GS8161E18BT	1Mb / 35P	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
	GS8161E18BT-V	1Mb / 35P	1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
	GS8160E18T	622Kb / 25P	1M x 18, 512K x 36 18Mb Sync Burst SRAMs
	GS816273C	516Kb / 25P	256K x 72 18Mb S/DCD Sync Burst SRAMs

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CXK79M72C164GB Fiches technique(PDF) 10 Page - Sony Corporation

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