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74AUP1G00GW Fiches technique(PDF) 7 Page - NXP Semiconductors

No de pièce 74AUP1G00GW
Description  Low-power 2-input NAND gate
Download  16 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

74AUP1G00GW Fiches technique(HTML) 7 Page - NXP Semiconductors

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74AUP1G00_2
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 02 — 29 June 2006
7 of 16
Philips Semiconductors
74AUP1G00
Low-power 2-input NAND gate
11. Dynamic characteristics
Table 8.
Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol
Parameter
Conditions
Min
Typ [1]
Max
Unit
Tamb = 25 °C; CL = 5 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay A or B to Y
see Figure 7
VCC = 0.8 V
-
17.5
-
ns
VCC = 1.1 V to 1.3 V
2.5
5.3
11.0
ns
VCC = 1.4 V to 1.6 V
2.0
3.8
6.8
ns
VCC = 1.65 V to 1.95 V
1.6
3.1
5.3
ns
VCC = 2.3 V to 2.7 V
1.3
2.5
4.0
ns
VCC = 3.0 V to 3.6 V
1.0
2.2
3.6
ns
Tamb = 25 °C; CL = 10 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay A or B to Y
see Figure 7
VCC = 0.8 V
-
21.0
-
ns
VCC = 1.1 V to 1.3 V
2.4
6.1
13.0
ns
VCC = 1.4 V to 1.6 V
2.4
4.4
7.9
ns
VCC = 1.65 V to 1.95 V
2.0
3.7
6.2
ns
VCC = 2.3 V to 2.7 V
1.4
3.0
4.7
ns
VCC = 3.0 V to 3.6 V
1.3
2.8
4.3
ns
Tamb = 25 °C; CL = 15 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay A or B to Y
see Figure 7
VCC = 0.8 V
-
24.5
-
ns
VCC = 1.1 V to 1.3 V
3.4
6.9
14.8
ns
VCC = 1.4 V to 1.6 V
2.8
5.0
8.9
ns
VCC = 1.65 V to 1.95 V
2.0
4.1
7.0
ns
VCC = 2.3 V to 2.7 V
1.7
3.5
5.3
ns
VCC = 3.0 V to 3.6 V
1.6
3.2
4.9
ns
Tamb = 25 °C; CL = 30 pF
tPHL, tPLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay A or B to Y
see Figure 7
VCC = 0.8 V
-
34.8
-
ns
VCC = 1.1 V to 1.3 V
4.6
9.2
20.1
ns
VCC = 1.4 V to 1.6 V
3.0
6.5
11.8
ns
VCC = 1.65 V to 1.95 V
2.6
5.4
9.3
ns
VCC = 2.3 V to 2.7 V
2.4
4.6
7.1
ns
VCC = 3.0 V to 3.6 V
2.3
4.3
6.5
ns


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