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74LVC1G79GM Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce 74LVC1G79GM
Description  Single D-type flip-flop; positive-edge trigger
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

74LVC1G79GM Fiches technique(HTML) 4 Page - NXP Semiconductors

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74LVC1G79_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 29 August 2007
4 of 16
NXP Semiconductors
74LVC1G79
Single D-type flip-flop; positive-edge trigger
7.
Functional description
[1]
H = HIGH voltage level;
L = LOW voltage level;
↑ = LOW-to-HIGH CP transition;
X = don’t care;
q = lower case letter indicates the state of referenced input, one set-up time prior to the LOW-to-HIGH CP transition.
8.
Limiting values
[1]
The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
When VCC = 0 V (Power-down mode), the output voltage can be 5.5 V in normal operation.
[3]
For TSSOP5 and SC-74A packages: above 87.5
°C the value of P
tot derates linearly with 4.0 mW/K.
For XSON6 packages: above 45
°C the value of P
tot derates linearly with 2.4 mW/K.
Table 4.
Function table[1]
Input
Output
CP
D
Q
LL
HH
LX
q
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
Conditions
Min
Max
Unit
VCC
supply voltage
−0.5
+6.5
V
IIK
input clamping current
VI < 0 V
−50
-
mA
VI
input voltage
[1]
−0.5
+6.5
V
IOK
output clamping current
VO > VCC or VO < 0 V
-
±50
mA
VO
output voltage
Active mode
[1][2]
−0.5
VCC + 0.5
V
Power-down mode
[1][2]
−0.5
+6.5
V
IO
output current
VO = 0 V to VCC
-
±50
mA
ICC
supply current
-
100
mA
IGND
ground current
−100
-
mA
Ptot
total power dissipation
Tamb = −40 °C to +125 °C
[3] -
250
mW
Tstg
storage temperature
−65
+150
°C


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