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74LVC1G66GV Fiches technique(PDF) 10 Page - NXP Semiconductors |
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74LVC1G66GV Fiches technique(HTML) 10 Page - NXP Semiconductors |
10 / 22 page 74LVC1G66_6 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 06 — 27 August 2007 10 of 22 NXP Semiconductors 74LVC1G66 Bilateral switch [1] Typical values are measured at Tamb =25 °C and nominal VCC. [2] tpd is the same as tPLH and tPHL [3] propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified capacitance when driven by an ideal voltage source (zero output impedance). [4] ten is the same as tPZH and tPZL [5] tdis is the same as tPLZ and tPHZ [6] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ{(CL +CS(ON))× VCC2 × fo} where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; CS(ON) = maximum ON-state switch capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; Σ{(C L +CS(ON)) × VCC 2 × f o} = sum of the outputs. 11.1 Waveforms and test circuit tdis disable time E to Y or Z; see Figure 17 [5] VCC = 1.65 V to 1.95 V 1.0 4.2 10 1.0 13 ns VCC = 2.3 V to 2.7 V 1.0 2.4 6.9 1.0 9.0 ns VCC = 2.7 V 1.0 3.6 7.5 1.0 9.5 ns VCC = 3.0 V to 3.6 V 1.0 3.4 6.5 1.0 8.5 ns VCC = 4.5 V to 5.5 V 1.0 2.5 5.0 1.0 6.5 ns CPD power dissipation capacitance CL = 50 pF; fi = 10 MHz; VI = GND to VCC [6] VCC = 2.5 V - 9.8 - - - pF VCC = 3.3 V - 12.0 - - - pF VCC = 5.0 V - 17.3 - - - pF Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 18. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 16. Input (Y or Z) to output (Z or Y) propagation delays mna667 tPLH tPHL VM VM Y or Z input Z or Y output GND VI VOH VOL |
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