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BF909 Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BF909 Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 12 page NXP Semiconductors Product specification N-channel dual gate MOS-FETs BF909; BF909R FEATURES • Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT143) and symbol. BF909 marking code: %M3. handbook, halfpage 43 2 1 Top view MAM124 s,b d g 1 g 2 Fig.2 Simplified outline (SOT143R) and symbol. BF909R marking code: %M4. handbook, halfpage Top view MAM125 - 1 s,b d g 1 g 2 34 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 7V ID drain current −− 40 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C y fs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 − 3.6 4.3 pF Crs reverse transfer capacitance f = 1 MHz − 35 50 fF F noise figure f = 800 MHz − 2 2.8 dB Rev. 02 - 19 November 2007 2 of 12 |
Numéro de pièce similaire - BF909 |
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Description similaire - BF909 |
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