BUK7608-40B datasheet(5/14 Pages) NXP

No de pièce	BUK7608-40B

Description	N-channel TrenchMOS standard level FET

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Fabricant	NXP [NXP Semiconductors]

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5 / 14 page

BUK75_7608-40B_2

Product data sheet

Rev. 02 — 16 November 2007

5 of 14

NXP Semiconductors

BUK75/7608-40B

N-channel TrenchMOS standard level FET

6.

Characteristics

Table 5.

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown

voltage

ID = 250 µA; VGS =0V

Tj =25 °C

40

--V

Tj = −55 °C

36

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; see Figure 9 and 10

Tj =25 °C

234V

Tj = 175 °C

1

--V

Tj = −55 °C

-

4.4

V

IDSS

drain leakage current

VDS =40V; VGS =0V

Tj =25 °C

-

0.02

1

µA

Tj = 175 °C

-

500

µA

IGSS

gate leakage current

VGS = ±20 V; VDS = 0 V

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS = 10 V; ID =25 A; see Figure 6 and 8

Tj =25 °C

-

6.6

8

m

Ω

Tj = 175 °C

-

15.2

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID = 25 A; VDD =32V; VGS =10V;

see Figure 14

-36

-

nC

QGS

gate-source charge

-

9

-

nC

QGD

gate-drain charge

-

12

-

nC

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz;

see Figure 12

-

2017

2689

pF

Coss

output capacitance

-

486

583

pF

Crss

reverse transfer capacitance

-

213

291

pF

td(on)

turn-on delay time

VDD =30V; RL = 1.2 Ω;

VGS =10V;RG =10 Ω

-20

-

ns

tr

rise time

-51

-

ns

td(off)

turn-off delay time

-

20

-

ns

tf

fall time

-33

-

ns

LD

internal drain inductance

from drain lead 6 mm from

package to center of die

-

4,5

-

nH

from contact screw on

mounting base to center of die

SOT78

-

3.5

nH

from upper edge of drain

mounting base to center of die

SOT404

-

2.5

-

nH

LS

internal source inductance

from source lead 6 mm from

package to source bond pad

-

7.5

-

nH

Source-drain diode

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