2SJ616 datasheet(2/4 Pages) SANYO

No de pièce	2SJ616

Description	Ultrahigh-Speed Switching Applications

Download	4 Pages

Scroll/Zoom	100%

Fabricant	SANYO [Sanyo Semicon Device]

Site Internet	https://www.sanyo-av.com/us/

Logo

2 / 4 page

2SJ616

No.7270-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Input Capacitance

Ciss

VDS=--10V, f=1MHz

510

pF

Output Capacitance

Coss

VDS=--10V, f=1MHz

115

pF

Reverse Transfer Capacitance

Crss

VDS=--10V, f=1MHz

78

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

11

ns

Rise Time

tr

See specified Test Circuit.

12

ns

Turn-OFF Delay Time

td(off)

See specified Test Circuit.

34

ns

Fall Time

tf

See specified Test Circuit.

23.5

ns

Total Gate Charge

Qg

VDS=--10V, VGS=--10V, ID=--6A

11

nC

Gate-to-Source Charge

Qgs

VDS=--10V, VGS=--10V, ID=--6A

2.4

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--10V, VGS=--10V, ID=--6A

1.7

nC

Diode Forward Voltage

VSD

IS=--6A, VGS=0

--0.9

--1.5

V

Switching Time Test Circuit

0

--2

--4

--6

--8

--10

50

100

150

200

250

300

0

50

100

150

200

0

--12

--14

--16

RDS(on) -- VGS

IT04759

0

--0.5

--2.0

--2.5

--4.0

--3.0

--3.5

--0.2

--1.5

--1.0

0

--1

--3

--4

--6

--5

--2

--0.5

--1.0

--0.8

--0.9

--0.1

--0.3

--0.4

--0.6

--0.7

ID -- VDS

IT04757

0

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

--3.5

--4.0

ID -- VGS

IT04758

RDS(on) -- Ta

IT04760

--60

--40

--20

0

20

40

60

80

100

120

140

160

VGS= --2.5V

--3.5V

--3.0V

VDS= --10V

ID= --1.5A

--3A

Tc=25

°C

ID=

--1.5A,

VGS

= --4V

ID=

--3A,

VGS

= --10V

Gate-to-Source Voltage, VGS -- V

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

°C

PW=10

µs

D.C.

≤1%

0V

--10V

VIN

P.G

50

Ω

G

S

ID= --3A

RL=5Ω

VDD= --15V

VOUT

VIN

D

2SJ616

Numéro de pièce similaire - 2SJ616

Fabricant	No de pièce	Fiches technique	Description
Toshiba Semiconductor	2SJ610	183Kb / 6P	Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications
	2SJ610	190Kb / 6P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
	2SJ610	233Kb / 6P	Switching Regulator
	2SJ610	1Mb / 73P	Bipolar Small-Signal Transistors
	2SJ610	183Kb / 6P	Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications

More results

Description similaire - 2SJ616

Fabricant	No de pièce	Fiches technique	Description
Sanyo Semicon Device	CPH3304	132Kb / 4P	Ultrahigh-Speed Switching Applications
	CPH3308	28Kb / 4P	Ultrahigh-Speed Switching Applications
	CPH3407	27Kb / 4P	Ultrahigh-Speed Switching Applications
	FW214	46Kb / 3P	Ultrahigh-Speed Switching Applications
	FW313	61Kb / 6P	Ultrahigh-Speed Switching Applications
	2SK2631	30Kb / 5P	Ultrahigh-Speed Switching Applications
	2SK1459	100Kb / 3P	Ultrahigh-Speed Switching Applications
	2SJ339	40Kb / 4P	Ultrahigh-Speed Switching Applications
	2SJ417	89Kb / 3P	Ultrahigh-Speed Switching Applications
	2SJ459	32Kb / 4P	Ultrahigh-Speed Switching Applications
	2SJ485	43Kb / 4P	Ultrahigh-Speed Switching Applications

More results

2SJ616 Fiches technique(PDF) 2 Page - Sanyo Semicon Device

2SJ616 Fiches technique(HTML) 2 Page - Sanyo Semicon Device

Numéro de pièce similaire - 2SJ616

Description similaire - 2SJ616

Html Pages

1 2 3 4

Fiches technique Télécharger

Lien URL