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IRLU2908PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRLU2908PBF
Description  HEXFET짰 Power MOSFET
Download  12 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRLU2908PBF Fiches technique(HTML) 1 Page - International Rectifier

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12/7/04
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1
IRLR2908PbF
IRLU2908PbF
HEXFET® Power MOSFET
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET
utilizes the latest processing techniques to achieve extremely low on-resistance per silicon
area. Additional features of this HEXFET power MOSFET are a 175°C junction operating
temperature, low R
θJC, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of other applications.\
The D-Pak is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount
applications.
S
D
G
VDSS = 80V
RDS(on) = 28mΩ
ID = 30A
D-Pak
IRLR2908
AUTOMOTIVE MOSFET
Features
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
PD - 95552A
I-Pak
IRLU2908
Absolute Maximum Ratings
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
™
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
EAS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
EAS (tested)
Single Pulse Avalanche Energy Tested Value
i
IAR
Avalanche Current
™
A
EAR
Repetitive Avalanche Energy
h
mJ
dv/dt
Peak Diode Recovery dv/dt
e
V/ns
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.3
°C/W
RθJA
Junction-to-Ambient (PCB Mount)
–––
40
RθJA
Junction-to-Ambient
–––
110
120
0.77
± 16
180
250
See Fig.12a,12b,15,16
Max.
39
28
150
30
300 (1.6mm from case )
-55 to + 175
2.3
l
Lead-Free


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