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STB14NF10T4 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STB14NF10T4 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 16 page STB14NF10 - STP14NF10 - STP14NF10FP Electrical ratings 3/16 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit D2PAK TO-220 TO-220FP VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 kΩ)100 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 15 10 A ID Drain current (continuous) at TC = 100°C 10 6.3 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 60 40 A Ptot Total dissipation at TC = 25°C 60 25 W Derating Factor 0.4 0.17 W/°C dv/dt (2) 2. ISD ≤14A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 9 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 15A, VDD = 50V Single pulse avalanche energy 70 mJ VISO Insulation withstand voltage (DC) -- 2500 V Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data D2PAK TO-220 TO-220FP Rthj-case Thermal resistance junction-case max 2.5 6 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
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