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IRFPS3810PBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRFPS3810PBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 8 page IRFPS3810PbF HEXFET® Power MOSFET The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 170 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 120 A IDM Pulsed Drain Current 670 PD @TC = 25°C Power Dissipation 580 W Linear Derating Factor 3.8 W/°C VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy 1350 mJ IAR Avalanche Current 100 A EAR Repetitive Avalanche Energy 58 mJ dv/dt Peak Diode Recovery dv/dt 2.3 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.26 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance VDSS = 100V RDS(on) = 0.009Ω ID = 170A Description 9/10/04 www.irf.com 1 l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Super-247™ PD - 95703 l Lead-Free |
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