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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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IRF7306PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7306PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7306PbF Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -30 V VGS = 0V, ID = -250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient -0.037 V/°C Reference to 25°C, ID = -1mA 0.10 VGS = -10V, ID = -1.8A 0.16 VGS = -4.5V, ID = -1.5A VGS(th) Gate Threshold Voltage -1.0 V VDS = VGS, ID = -250µA gfs Forward Transconductance 2.5 S VDS = -24V, ID = -1.8A -1.0 VDS = -24V, VGS = 0V -25 VDS = -24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage -100 VGS = -20V Gate-to-Source Reverse Leakage 100 VGS = 20V Qg Total Gate Charge 25 ID = -1.8A Qgs Gate-to-Source Charge 2.9 nC VDS = -24V Qgd Gate-to-Drain ("Miller") Charge 9.0 VGS = -10V, See Fig. 6 and 12 td(on) Turn-On Delay Time 11 VDD = -15V tr Rise Time 17 ID = -1.8A td(off) Turn-Off Delay Time 25 RG = 6.0Ω tf Fall Time 18 RD = 8.2Ω, See Fig. 10 Between lead tip and center of die contact Ciss Input Capacitance 440 VGS = 0V Coss Output Capacitance 200 pF VDS = -25V Crss Reverse Transfer Capacitance 93 = 1.0MHz, See Fig. 5 Notes: Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage -1.0 V TJ = 25°C, IS = -1.8A, VGS = 0V trr Reverse Recovery Time 5380 ns TJ = 25°C, IF = -1.8A Qrr Reverse RecoveryCharge 66 99 nC di/dt = 100A/µs ton Forward Turn-On Time Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD ≤ -1.8A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤150°C Pulse width ≤ 300µs; duty cycle ≤ 2%. Source-Drain Ratings and Characteristics Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) -14 -2.5 A IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 6.0 LD Internal Drain Inductance 4.0 nH ns nA µA Ω RDS(ON) Static Drain-to-Source On-Resistance S D G S D G Surface mounted on FR-4 board, t ≤ 10sec. |
Numéro de pièce similaire - IRF7306PBF |
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Description similaire - IRF7306PBF |
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