2N5003 datasheet(2/2 Pages) SEMICOA

No de pièce	2N5003

Description	Silicon PNP Transistor

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Fabricant	SEMICOA [Semicoa Semiconductor]

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Copyright

 2002

Semicoa Semiconductors, Inc.

Rev. C

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

Page 2 of 2

www.SEMICOA.com

2N5003

Silicon PNP Transistor

Data Sheet

ELECTRICAL CHARACTERISTICS

characteristics specified at TA = 25°C

Off Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC = 100 mA

80

Volts

Collector-Emitter Cutoff Current

ICEO

VCE = 40 Volts

50

µA

Collector-Emitter Cutoff Current

ICEX

VCE = 60 Volts, VEB = 2 Volts,

TA = 150°C

500

µA

Collector-Emitter Cutoff Current

ICES1

ICES2

VCE = 60 Volts

VCE = 100 Volts

1

µA

mA

Emitter-Base Cutoff Current

IEBO1

IEBO2

VEB = 4 Volts

VEB = 5.5 Volts

1

µA

mA

Thermal Impedance

θJC

3.1

°C/W

On Characteristics

Pulse Test: Pulse Width = 300

µs, Duty Cycle ≤ 2.0%

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

DC Current Gain

hFE1

hFE2

hFE3

hFE4

IC = 50 mA, VCE = 5 Volts

IC = 2.5 A, VCE = 5 Volts

IC = 5 A, VCE = 5 Volts

IC = 2.5 A, VCE = 5 Volts

TA = -55°C

20

30

20

15

90

Base-Emitter Voltage

VBE

VCE = 5 Volts, IC = 2.5 A

1.45

Volts

Base-Emitter Saturation Voltage

VBEsat1

VBEsat2

IC = 2.5 A, IB = 250 mA

IC = 5 A, IB = 500 mA

1.45

2.20

Volts

Collector-Emitter Saturation Voltage

VCEsat1

VCEsat2

IC = 2.5 A, IB = 250 mA

IC = 5 A, IB = 500 mA

0.75

1.50

Volts

Dynamic Characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Magnitude – Common Emitter, Short

Circuit Forward Current Transfer Ratio

|hFE|

VCE = 5 Volts, IC = 500 mA,

f = 10 MHz

6

Small Signal Short Circuit Forward

Current Transfer Ratio

hFE

VCE = 5 Volts, IC = 100 mA,

f = 1 kHz

20

Open Circuit Output Capacitance

COBO

VCB = 10 Volts, IE = 0 mA,

100 kHZ < f < 1 MHz

250

pF

Switching Characteristics

Saturated Turn-On Time

Rise Time

Fall Time

Saturated Turn-Off Time

tON

tr

tf

tOFF

IC = 5 A, IB1=IB2 = 500 mA,

VBE = 3.7 Volts, RL = 6 Ω

0.5

1.4

0.5

1.5

µs

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