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IRF7410PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7410PBF
Description  HEXFET짰Power MOSFET
Download  9 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7410PBF Fiches technique(HTML) 1 Page - International Rectifier

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Parameter
Max.
Units
VDS
Drain- Source Voltage
-12
V
ID @ TA = 25°C
Continuous Drain Current, VGS @ -4.5V
-16
ID @ TA= 70°C
Continuous Drain Current, VGS @ -4.5V
-13
A
IDM
Pulsed Drain Current

-65
PD @TA = 25°C
Power Dissipation
ƒ
2.5
PD @TA = 70°C
Power Dissipation
ƒ
1.6
Linear Derating Factor
20
mW/°C
VGS
Gate-to-Source Voltage
±8
V
TJ, TSTG
Junction and Storage Temperature Range
-55 to +150
°C
8/25/06
www.irf.com
1
IRF7410PbF
HEXFET® Power MOSFET
These P-Channel HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
s.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Lead-Free
PD - 96028A
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
ƒ
50
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
Top View
8
1
2
3
4
5
6
7
D
D
D
G
S
A
D
S
S
SO-8
VDSS
RDS(on) max
ID
-12V
7m
Ω@VGS = -4.5V
-
16A
9m
Ω@VGS = -2.5V
-
13.6A
13m
Ω@VGS = -1.8V
-
11.5A


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