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IRG4BC30KDPBF Fiches technique(PDF) 1 Page - International Rectifier |
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IRG4BC30KDPBF Fiches technique(HTML) 1 Page - International Rectifier |
1 / 11 page Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 28 IC @ TC = 100°C Continuous Collector Current 16 ICM Pulsed Collector Current 58 A ILM Clamped Inductive Load Current 58 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 58 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V PD @ TC = 25°C Maximum Power Dissipation 100 PD @ TC = 100°C Maximum Power Dissipation 42 TJ Operating Junction and -55 to +150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw. 10 lbfin (1.1 Nm) IRG4BC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE E G n-channel C VCES = 600V VCE(on) typ. = 2.21V @VGE = 15V, IC = 16A Short Circuit Rated UltraFast IGBT 12/23/03 PD -94910 Parameter Min. Typ. Max. Units RθJC Junction-to-Case - IGBT 1.2 RθJC Junction-to-Case - Diode 2.5 °C/W RθCS Case-to-Sink, flat, greased surface 0.50 RθJA Junction-to-Ambient, typical socket mount 80 Wt Weight 2 (0.07) g (oz) Thermal Resistance Absolute Maximum Ratings W TO-220AB Features High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V Combines low conduction losses with high switching speed tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free Latest generation 4 IGBTs offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGBC30KD2 and IRGBC30MD2 products For hints see design tip 97003 Benefits www.irf.com 1 |
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