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IRL3303SPBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRL3303SPBF Fiches technique(HTML) 2 Page - International Rectifier |
2 / 11 page IRL3303S/LPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.035 V/°C Reference to 25°C, ID = 1mA
0.026 VGS = 10V, ID = 20A 0.040 Ω VGS = 4.5V, ID = 17A TJ = 150°C VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 12 S VDS = 25V, ID = 20A
25 µA VDS = 30V, VGS = 0V 250 VDS = 24V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage 100 VGS = 16V Gate-to-Source Reverse Leakage -100 nA VGS = -16V Qg Total Gate Charge 26 ID = 20A Qgs Gate-to-Source Charge 8.8 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge 15 VGS = 4.5V, See Fig. 6 and 13
td(on) Turn-On Delay Time 7.4 VDD = 15V tr Rise Time 200 ID = 20A td(off) Turn-Off Delay Time 14 RG = 6.5Ω tf Fall Time 36 RD = 0.7Ω, See Fig. 10
Between lead, and center of die contact Ciss Input Capacitance 870 VGS = 0V Coss Output Capacitance 340 pF VDS = 25V Crss Reverse Transfer Capacitance 170 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) Static Drain-to-Source On-Resistance IGSS IDSS Drain-to-Source Leakage Current LS Internal Source Inductance 7.5 nH Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 20A, di/dt ≤ 140A/µs, V DD ≤ V(BR)DSS, TJ ≤ 175°C Notes: VDD = 15V, starting TJ = 25°C, L = 470µH RG = 25Ω, IAS = 20A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.
Uses IRL3303 data and test conditions. Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 20A, VGS = 0V trr Reverse Recovery Time 72 110 ns TJ = 25°C, IF = 20A Qrr Reverse Recovery Charge 180 280 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) A 38 140 S D G |
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