BCP55 datasheet(2/2 Pages) DIOTEC

No de pièce	BCP55

Description	Surface Mount General Purpose Si-Epi-Planar Transistors

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Fabricant	DIOTEC [Diotec Semiconductor]

Site Internet	http://www.diotec.com

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BCP54 ... BCP56

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

VCB = 30 V, Tj = 125°C, (E open)

ICB0

–

100 nA

10 µA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

VEB = 5 V, (C open)

IEB0

–

100 nA

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

–

130 MHz

–

DC current gain ratio of the complementary pairs

Verhältnis der Stromverstärkungen komplementärer Paare

l IC l = 150 mA, l VCE l = 2 V

hFE1/hFE2

––

1.6

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 93 K/W 1)

Thermal resistance junction to soldering point

Wärmewiderstand Sperrschicht – Lötpad

RthS

< 27 K/W

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCP51 ... BCP53

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

[%]

P

tot

120

100

80

60

40

20

0

[°C]

T

A

150

100

50

0

Power dissipation versus ambient temperature )

Verlustleistung in Abh. von d. Umgebungstemp. )

1

Numéro de pièce similaire - BCP55

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BCP55	43Kb / 8P	NPN medium power transistors 1999 Apr 08
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