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IRFP32N50KPBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRFP32N50KPBF
Description  HEXFET Power MOSFET ( VDSS = 500V , RDS(on)typ. = 0.135廓 , ID = 32A )
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRFP32N50KPBF Fiches technique(HTML) 2 Page - International Rectifier

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IRFP32N50KPbF
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
500
––– –––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.54 –––
V/°C Reference to 25°C, ID = 1mA
†
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.135 0.16
VGS = 10V, ID = 32A
„
VGS(th)
Gate Threshold Voltage
3.0
–––
5.0
V
VDS = VGS, ID = 250µA
–––
–––
50
µA
VDS = 500V, VGS = 0V
–––
––– 250
µA
VDS = 400V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
––– 100
VGS = 30V
Gate-to-Source Reverse Leakage
–––
––– -100
nA
VGS = -30V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ ISD ≤ 32A, di/dt ≤ 197A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 0.87mH, RG = 25Ω,
IAS = 32A,
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
14
––– –––
S
VDS = 50V, ID = 32A
Qg
Total Gate Charge
–––
–––
190
ID = 32A
Qgs
Gate-to-Source Charge
–––
–––
59
nC
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
–––
–––
84
VGS = 10V
„
td(on)
Turn-On Delay Time
–––
28
–––
VDD = 250V
tr
Rise Time
–––
120 –––
ID = 32A
td(off)
Turn-Off Delay Time
–––
48
–––
RG = 4.3Ω
tf
Fall Time
–––
54
–––
VGS = 10V
„
Ciss
Input Capacitance
–––
5280 –––
VGS = 0V
Coss
Output Capacitance
–––
550 –––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
45
–––
pF
ƒ = 1.0MHz, See Fig. 5
Coss
Output Capacitance
–––
5630 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
155 –––
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
Coss eff.
Effective Output Capacitance
–––
265 –––
VGS = 0V, VDS = 0V to 400V
…
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.5
V
TJ = 25°C, IS = 32A, VGS = 0V
„
trr
Reverse Recovery Time
––– 530
800
ns
TJ = 25°C, IF = 32A
Qrr
Reverse RecoveryCharge
–––
9.0 13.5
µC
di/dt = 100A/µs
„
IRRM
Reverse RecoveryCurrent
–––
30
–––
A
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
S
D
G
Diode Characteristics
32
130
A
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.


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