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IRF7316PBF Fiches technique(PDF) 1 Page - International Rectifier

No de pièce IRF7316PBF
Description  HEXFET짰Power MOSFET
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7316PBF Fiches technique(HTML) 1 Page - International Rectifier

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HEXFET® Power MOSFET
PD - 95182
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
10/7/04
SO-8
VDSS = -30V
RDS(on) = 0.058Ω
IRF7316PbF
Description
Symbol
Maximum
Units
Drain-Source Voltage
VDS
-30
Gate-Source Voltage
VGS
± 20
TA = 25°C
-4.9
TA = 70°C
-3.9
Pulsed Drain Current
IDM
-30
Continuous Source Current (Diode Conduction)
IS
-2.5
TA = 25°C
2.0
TA = 70°C
1.3
Single Pulse Avalanche Energy
EAS
140
mJ
Avalanche Current
IAR
-2.8
A
Repetitive Avalanche Energy
EAR
0.20
mJ
Peak Diode Recovery dv/dt
ƒ
dv/dt
-5.0
V/ ns
Junction and Storage Temperature Range
TJ,TSTG
-55 to + 150
°C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
…
RθJA
62.5
°C/W
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Continuous Drain Current
…
Maximum Power Dissipation
…
A
ID
PD
V
W
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
l
Lead-Free


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