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IRF7316PBF Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRF7316PBF
Description  HEXFET짰Power MOSFET
Download  7 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRF7316PBF Fiches technique(HTML) 2 Page - International Rectifier

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IRF7316PbF
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode) 
p-n junction diode.
VSD
Diode Forward Voltage
––– -0.78 -1.0
V
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
trr
Reverse Recovery Time
–––
44
66
ns
TJ = 25°C, IF = -1.7A
Qrr
Reverse RecoveryCharge
–––
42
63
nC
di/dt = 100A/µs ƒ
Source-Drain Ratings and Characteristics
––– –––
––– –––
-30
-2.5
A
… Surface mounted on FR-4 board, t ≤ 10sec.
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 35mH
RG = 25Ω, IAS = -2.8A.
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.022 –––
V/°C Reference to 25°C, ID = -1mA
––– 0.042 0.058
VGS = -10V, ID = -4.9A „
––– 0.076 0.098
VGS = -4.5V, ID = -3.6A „
VGS(th)
Gate Threshold Voltage
-1.0 ––– –––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
––– 7.7 –––
S
VDS = -15V, ID = -4.9A
––– ––– -1.0
VDS = -24V, VGS = 0V
––– ––– -25
VDS = -24V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
––– ––– 100
VGS = -20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = 20V
Qg
Total Gate Charge
–––
23
34
ID = -4.9A
Qgs
Gate-to-Source Charge
––– 3.8
5.7
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
––– 5.98.9
VGS = -10V, See Fig. 10 „
td(on)
Turn-On Delay Time
–––
13
19VDD = -15V
tr
Rise Time
–––
13
20
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
34
51
RG = 6.0Ω
tf
Fall Time
–––
32
48
RD = 15Ω „
Ciss
Input Capacitance
––– 710 –––
VGS = 0V
Coss
Output Capacitance
––– 380 –––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
––– 180 –––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
S
D
G


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