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Moteur de recherche de fiches techniques de composants électroniques |
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IRL3714PBF Fiches technique(PDF) 2 Page - International Rectifier |
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IRL3714PBF Fiches technique(HTML) 2 Page - International Rectifier |
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2 / 12 page  IRL3714/S/LPbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V ––– 0.88 ––– TJ = 125°C, IS = 18A, VGS = 0V trr Reverse Recovery Time ––– 35 53 ns TJ = 25°C, IF = 18A, VR=10V Qrr Reverse Recovery Charge ––– 34 51 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 35 53 ns TJ = 125°C, IF = 18A, VR=10V Qrr Reverse Recovery Charge ––– 35 53 nC di/dt = 100A/µs Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA ––– 15 20 VGS = 10V, ID = 18A ––– 21 28 VGS = 4.5V, ID = 14A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) ns Symbol Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 72 mJ IAR Avalanche Current ––– 14 A Avalanche Characteristics S D G Diode Characteristics A Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 17 ––– ––– S VDS = 10V, ID = 14A Qg Total Gate Charge ––– 6.5 9.7 ID = 14A Qgs Gate-to-Source Charge ––– 1.8 ––– nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 2.9 ––– VGS = 4.5V Qoss Output Gate Charge ––– 7.1 ––– VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 8.7 ––– VDD = 10V tr Rise Time ––– 78 ––– ID = 14A td(off) Turn-Off Delay Time ––– 10 ––– RG = 1.8Ω tf Fall Time ––– 4.5 ––– VGS = 4.5V Ciss Input Capacitance ––– 670 ––– VGS = 0V Coss Output Capacitance ––– 470 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 68 ––– pF ƒ = 1.0MHz VSD Diode Forward Voltage Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance 36 140 m Ω |
Numéro de pièce similaire - IRL3714PBF |
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Description similaire - IRL3714PBF |
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