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STK38X60LM Fiches technique(PDF) 3 Page - AUK corp |
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STK38X60LM Fiches technique(HTML) 3 Page - AUK corp |
3 / 8 page KSD-T0H011-001 3 STK38X60LM Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS ID=250μA, VGS=0 600 - - V Gate-threshold voltage VGS(th) ID=250μA, VDS= VGS 3.0 - 5.0 V Drain-source leakage current IDSS VDS=600V, VGS=0V - - 1 μA Gate-source leakage IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-Source on-resistance ④ RDS(ON) VGS=10V, ID=0.19A - 9.3 11.5 Ω Forward transfer admittance ④ gfs VDS=10V, ID=0.19A - 0.95 - S Input capacitance Ciss - 150 225 Output capacitance Coss - 20 30 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 4.3 6.4 pF Turn-on delay time td(on) - 22.5 - Rise time tr - 27 - Turn-off delay time td(off) - 11.5 - Fall time tf VDD=300V, VGS=10V ID=0.38A, RG=25Ω ③④ - 27 - ns Total gate charge Qg - 4.5 6.7 Gate-source charge Qgs - 0.9 1.3 Gate-drain charge Qgd VDD=300V, VGS=10V ID=0.38A ③④ - 1.3 1.9 nC Source-Drain Diode Ratings and Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min Typ Max Unit Continuous source current IS - - 0.4 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 1.6 A Forward voltage ④ VSD VGS=0V, IS=0.19A - - 1.4 V Reverse recovery time trr - 160 - ns Reverse recovery charge Qrr Is=0.38A, VGS=0V dis/dt=100A/us - 0.59 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=20mH, I AS=0.38A, VDD=50V, RG=25Ω ③ Pulse Test : Pulse Width< 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature |
Numéro de pièce similaire - STK38X60LM |
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Description similaire - STK38X60LM |
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