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SI3552DV-T1 Fiches technique(PDF) 6 Page - Vishay Siliconix |
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SI3552DV-T1 Fiches technique(HTML) 6 Page - Vishay Siliconix |
6 / 8 page Si3552DV Vishay Siliconix www.vishay.com 6 Document Number: 70971 S-31725—Rev. B, 18-Aug-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) PCHANNEL 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 TJ = 25_C TJ = 150_C Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) -0.4 -0.2 0.0 0.2 0.4 0.6 -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 2468 10 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 0 1234 5 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 Gate Charge Qg - Total Gate Charge (nC) On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.8 A TJ - Junction Temperature (_C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage TJ - Temperature (_C) ID = 250 mA VDS = 15 V ID = 1.8 A ID = 1.8 A ID = 1 A 0.01 0 1 6 8 2 4 10 30 0.1 Single Pulse Power (Junction-to-Ambient) Time (sec) |
Numéro de pièce similaire - SI3552DV-T1 |
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Description similaire - SI3552DV-T1 |
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