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SI3552DV Fiches technique(PDF) 1 Page - Vishay Siliconix |
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SI3552DV Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 8 page FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested Si3552DV Vishay Siliconix Document Number: 70971 S-31725—Rev. B, 18-Aug-03 www.vishay.com 1 N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) N-Channel 30 0.105 @ VGS = 10 V 2.5 N-Channel 30 0.175 @ VGS = 4.5 V 2.0 P Channel 30 0.200 @ VGS = -10 V -1.8 P-Channel -30 0.360 @ VGS = -4.5 V -1.2 D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 Ordering Information: Si3552DV-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS "20 "20 V Continuous Drain Current (TJ = 150_C)a b TA = 25_C ID 2.5 -1.8 Continuous Drain Current (TJ = 150_C)a, b TA = 70_C ID 2.0 -1.2 A Pulsed Drain Current IDM 8 -7 A Continuous Source Current (Diode Conduction)a, b IS 1.05 -1.05 Maximum Power Dissipationa b TA = 25_C PD 1.15 W Maximum Power Dissipationa, b TA = 70_C PD 0.73 W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Mi J ti t A bi ta t v 5 sec R 93 110 Maximum Junction-to-Ambienta Steady State RthJA 130 150 _C/W Maximum Junction-to-Lead Steady State RthJL 75 90 C/W Notes a. Surface Mounted on FR4 Board. b. t v 5 sec |
Numéro de pièce similaire - SI3552DV_05 |
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Description similaire - SI3552DV_05 |
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