BDX54A datasheet(2/6 Pages) POINN

No de pièce	BDX54A

Description	PNP SILICON POWER DARLINGTONS

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Fabricant	POINN [Power Innovations Ltd]

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BDX54, BDX54A, BDX54B, BDX54C

PNP SILICON POWER DARLINGTONS

2

MAY 1989 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = -100 mA

IB = 0

(see Note 3)

BDX54

BDX54A

BDX54B

BDX54C

-45

-60

-80

-100

V

ICEO

Collector-emitter

cut-off current

VCE = -30 V

VCE = -40 V

VCE = -50 V

IB = 0

BDX54

BDX54A

BDX54B

BDX54C

-0.5

mA

ICBO

Collector cut-off

current

VCB = -45 V

VCB = -60 V

VCB = -80 V

VCB = -100 V

IE = 0

BDX54

BDX54A

BDX54B

BDX54C

-0.2

mA

IEBO

Emitter cut-off

current

VEB =

-5 V

IC = 0

-2

mA

hFE

Forward current

transfer ratio

VCE =

-3 V

IC = -3 A

(see Notes 3 and 4)

750

VBE(sat)

Base-emitter

saturation voltage

IB =

-12 mA

IC = -3 A

(see Notes 3 and 4)

-2.5

V

VCE(sat)

Collector-emitter

saturation voltage

IB =

-12 mA

IC = -3 A

(see Notes 3 and 4)

-2

V

VEC

Parallel diode

forward voltage

IE =

-3 A

IB = 0

-2.5

V

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

2.08

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

†

MIN

TYP

MAX

UNIT

ton

Turn-on time

IC = -3 A

VBE(off) = 4.2 V

IB(on) = -12 mA

RL = 10 Ω

IB(off) = 12 mA

tp = 20 µs, dc ≤ 2%

1

µs

toff

Turn-off time

5

µs

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