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FW349 Fiches technique(PDF) 3 Page - Sanyo Semicon Device

No de pièce FW349
Description  N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
Download  6 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW349 Fiches technique(HTML) 3 Page - Sanyo Semicon Device

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FW349
No.8750-3/6
Switching Time Test Circuit
[N-channel]
[P-channel]
PW=10µs
D.C.≤1%
P.G
50Ω
G
S
D
ID=5A
RL=4.8Ω
VDD=24V
VOUT
FW349
VIN
10V
0V
VIN
PW=10µs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --4.5A
RL=5.33Ω
VDD= --24V
VOUT
FW349
VIN
0V
--10V
VIN
RDS(on) -- VGS
ID -- VDS
ID -- VGS
RDS(on) -- Ta
[Nch]
[Nch]
[Nch]
[Nch]
[Nch]
[Nch]
yfs -- ID
IS -- VSD
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
Ambient Temperature, Ta --
°C
0.01
2
0.1
7
5
3
2
10
7
5
3
2
1.0
7
5
3
20
10
40
60
80
30
50
70
90
100
1
2
3
4
5
6
7
0
--60
--40
--20
0
20
406080
100
120
140
160
02468
10
12
14
16
IT12876
0
10
40
70
20
50
80
30
60
90
100
1.0
0.5
2.0
3.0
4.0
1.5
2.5
3.5
4.5
5.0
0
00.4
0.81.0
0.2
0.1
0.6
0.5
0.9
0.3
0.7
VGS=3V
IT12874
00.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS=10V
IT12875
IT12877
0
Ta=25
°C
5A
ID=3A
VGS
=10V
, ID
=5A
V GS
=4V
, I D
=3A
IT12878
0.01
0.1
23
5 7
10
23
5 7
2
1.0
35 7
0.1
2
1.0
7
5
3
2
10
7
5
3
VDS=10V
Ta=
--25
°C
IT12879
0.2
0.4
0.6
0.8
1.0
1.2
VGS=0V
75
°C
25
°C


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