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FW163 Fiches technique(PDF) 2 Page - Sanyo Semicon Device

No de pièce FW163
Description  P-Channel Silicon MOSFET General-Purpose Switching Device
Download  4 Pages
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Fabricant  SANYO [Sanyo Semicon Device]
Site Internet  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

FW163 Fiches technique(HTML) 2 Page - Sanyo Semicon Device

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FW163
No. A0349-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
28
ns
Rise Time
tr
See specified Test Circuit.
150
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
160
ns
Fall Time
tf
See specified Test Circuit.
95
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--7A
47
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--7A
7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--7A
9
nC
Diode Forward Voltage
VSD
IS=--7A, VGS=0V
--0.82
--1.5
V
Package Dimensions
Switching Time Test Circuit
unit : mm
7005-003
14
5
8
5.0
0.595
1.27
0.2
0.43
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
ID -- VGS
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
IT10776
IT10777
0
--3.5
--0.5
0
0
--7
--6
--5
--4
--3
--1.0
--0.2
--0.3
--0.4
--0.1
--0.5
--0.6
--0.7
--0.8
--0.9
--2
--1
0
--10
--1.0
--1.5
--2.0
--2.5
--3.0
--8
--6
--4
--2
VGS= --2.5V
VDS= --10V
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID= --7A
RL=2.14Ω
VDD= --15V
VOUT
FW163
VIN
0V
--10V
VIN


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