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2SK2312 Fiches technique(PDF) 2 Page - Toshiba Semiconductor |
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2SK2312 Fiches technique(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK2312 2002-02-06 2 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = 60 V, VGS = 0 V — — 100 µA Drain−source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 0.8 — 2.0 V VGS = 4 V, ID = 25 A — 19 25 Drain−source ON resistance RDS (ON) VGS = 10 V, ID = 25 A — 13 17 mΩ Forward transfer admittance |Yfs| VDS = 10 V, ID = 25 A 28 40 — S Input capacitance Ciss — 3350 — Reverse transfer capacitance Crss — 550 — Output capacitance Coss VDS = 10 V, VGS = 0 V, f = 1 MHz — 1600 — pF Rise time tr — 25 — Turn−on time ton — 55 — Fall time tf — 60 — Switching time Turn−off time toff — 180 — ns Total gate charge (Gate−source plus gate−drain) Qg — 110 — Gate−source charge Qgs — 70 — Gate−drain (“miller”) charge Qgd VDD ≈ 48 V, VGS = 10 V, ID = 45 A — 40 — nC Source–Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 45 A Pulse drain reverse current (Note 1) IDRP — — — 180 A Forward voltage (diode) VDSF IDR = 45 A, VGS = 0 V — — −1.7 V Reverse recovery time trr — 120 — ns Reverse recovered charge Qrr IDR = 45 A, VGS = 0 V dIDR / dt = 50 A / µs — 0.2 — µC Marking |
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