Moteur de recherche de fiches techniques de composants électroniques |
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SSC-MGT6322 Fiches technique(PDF) 3 Page - Seoul Semiconductor |
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SSC-MGT6322 Fiches technique(HTML) 3 Page - Seoul Semiconductor |
3 / 11 page 4. Electro-Optical Characteristics (Ta=25ºC) Parameter Symbol Condition Min Typ Max Unit Forward Voltage (per die) V F I F =20 mA 2.7 3.3 4.1 V Reverse Current (per die) I R V R=5V - - 10 µA Luminance Intensity *1 I V I F =60 mA - 1800 - mcd Dominant Wavelength λ d I F =60 mA 519 527 537 nm Peak Wavelength λ P I F =60mA - 520 - nm Spectral Bandwidth ∆λ I F =60 mA - 20 - nm Viewing Angle *2 2 θ½ I F =60 mA - 120 - deg *1 The luminous intensity IV was measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. Luminous Intensity Measurement allowance is ±10%. *2 2 θ½ is the off-axis where the luminous intensity is 1/2 of the peak intensity. [Note] All measurements were made under the standardized environment of SSC. SEOUL SEMICONDUCTOR CO., LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, 153-023, Korea Phone : 82-2-2106-7305~6 - 3/10 - SSC-MGT722 SSC-QP-7-03-08(REV.07) |
Numéro de pièce similaire - SSC-MGT6322 |
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Description similaire - SSC-MGT6322 |
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