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SSC-TG102 Fiches technique(PDF) 2 Page - Seoul Semiconductor |
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SSC-TG102 Fiches technique(HTML) 2 Page - Seoul Semiconductor |
2 / 7 page 1. Features Package : 1.6×0.8×0.6 mm Untinted, Diffused flat mold Wavelength : 527 nm 2. Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Value Unit Power Dissipation Pd 111 mW Forward Current IF 30 mA Peak Forward Current IFM *1 50 mA Reverse Voltage VR 5 V Operating Temperature Topr -30 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ *1 IFM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10 3. Electro-Optical Characteristics (Ta=25℃) Parameter Symbol Condition Min Typ Max Unit Forward Voltage VF IF=20mA 2.9 3.1 3.7 V Reverse Current IR VR=5V - - 10 ㎂ Luminous Intensity*2 IV IF=20mA 100 140 180 mcd Wavelength λ D IF=20mA 521 527 534 nm Spectral Bandwidth Δλ IF=20mA - 35 - nm Viewing angle*3 2θ 1/2 IF=20mA - 120 - ˚ *2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package. *3 θ 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity. [Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within the maximum ratings shown above. All measurements were made under the standardized environment of SSC. (Tolerance : Iv ±10 %, λD ±2 nm, VF ±0.1 V) SEOUL SEMICONDUCTOR CO,. LTD. 148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea TEL: 82-2-3281-6269 FAX: 82-2-858-5537 - 2/7 - SSC-TG102 SSC-QP-0401-06(REV.0) |
Numéro de pièce similaire - SSC-TG102 |
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Description similaire - SSC-TG102 |
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