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SSC-TG102 Fiches technique(PDF) 2 Page - Seoul Semiconductor

No de pièce SSC-TG102
Description  CHIP LED DEVICE
Download  7 Pages
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Fabricant  SEOUL [Seoul Semiconductor]
Site Internet  http://www.seoulsemicon.com
Logo SEOUL - Seoul Semiconductor

SSC-TG102 Fiches technique(HTML) 2 Page - Seoul Semiconductor

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1. Features
Package : 1.6×0.8×0.6 mm
Untinted, Diffused flat mold
Wavelength : 527 nm
2. Absolute Maximum Ratings
(Ta=25℃)
Parameter
Symbol
Value
Unit
Power Dissipation
Pd
111
mW
Forward Current
IF
30
mA
Peak Forward Current
IFM
*1
50
mA
Reverse Voltage
VR
5
V
Operating Temperature
Topr
-30 ~ +85
Storage Temperature
Tstg
-40 ~ +100
*1 IFM conditions: Pulse width Tw≤ 0.1ms, Duty ratio≤ 1/10
3. Electro-Optical Characteristics
(Ta=25℃)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage
VF
IF=20mA
2.9
3.1
3.7
V
Reverse Current
IR
VR=5V
-
-
10
Luminous Intensity*2
IV
IF=20mA
100
140
180
mcd
Wavelength
λ D
IF=20mA
521
527
534
nm
Spectral Bandwidth
Δλ
IF=20mA
-
35
-
nm
Viewing angle*3
1/2
IF=20mA
-
120
-
˚
*2 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
*3 θ 1/2 is the off-axis where the luminous intensity is 1/2 the peak intensity.
[Note] All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at 20mA within
the maximum ratings shown above. All measurements were made under the standardized environment of SSC.
(Tolerance : Iv ±10 %, λD ±2 nm, VF ±0.1 V)
SEOUL SEMICONDUCTOR CO,. LTD.
148-29 Kasan-Dong, Keumchun-Gu, Seoul, Korea
TEL: 82-2-3281-6269 FAX: 82-2-858-5537
- 2/7 -
SSC-TG102
SSC-QP-0401-06(REV.0)


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