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STB50NE10 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STB50NE10 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB50NE10 Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 100 V VDGR Drain-gate voltage (RGS = 20 kΩ) 100 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 50 A ID Drain current (continuous) at TC = 100°C 35 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 200 A Ptot Total dissipation at TC = 25°C 180 W Derating Factor 1.2 W/°C dv/dt Peak diode recovery voltage slope 6 V/ns Tstg Storage temperature -65 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 0.83 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Rthj-sink Thermal resistance case-sink max 0.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 50 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 300 mJ |
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Description similaire - STB50NE10 |
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