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STK22C48-N25I Fiches technique(PDF) 4 Page - Simtek Corporation

No de pièce STK22C48-N25I
Description  2Kx8 AutoStore nvSRAM
Download  15 Pages
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Fabricant  SIMTEK [Simtek Corporation]
Site Internet  http://www.simtek.com
Logo SIMTEK - Simtek Corporation

STK22C48-N25I Fiches technique(HTML) 4 Page - Simtek Corporation

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4
February 2007
Document Control #ML0004 Rev 0.3
STK22C48
SRAM READ CYCLES #1 & #2
(VCC = 5.0V ± 10%)
e
Note g:
W and HSB must be high during SRAM READ cycles.
Note h:
Device is continuously selected with E and G both low.
Note i:
Measured
± 200mV from steady state output voltage.
SRAM READ CYCLE #1: Address Controlledg, h
SRAM READ CYCLE #2: E Controlledg
SRAM WRITE CYCLES #1 & #2
(VCC = 5.0V ± 10%)
e
NO.
SYMBOLS
PARAMETER
STK22C48-25
STK22C48-45
UNITS
#1, #2
Alt.
MIN
MAX
MIN
MAX
1
tELQV
tACS
Chip Enable Access Time
25
45
ns
2
tAVAV
g
tRC
Read Cycle Time
25
45
ns
3
tAVQV
h
tAA
Address Access Time
25
45
ns
4
tGLQV
tOE
Output Enable to Data Valid
10
20
ns
5
tAXQX
h
tOH
Output Hold after Address Change
5
5
ns
6
tELQX
tLZ
Chip Enable to Output Active
5
5
ns
7
tEHQZ
i
tHZ
Chip Disable to Output Inactive
10
15
ns
8
tGLQX
tOLZ
Output Enable to Output Active
0
0
ns
9
tGHQZ
i
tOHZ
Output Disable to Output Inactive
10
15
ns
10
tELICCH
f
tPA
Chip Enable to Power Active
0
0
ns
11
tEHICCL
f
tPS
Chip Disable to Power Standby
25
45
ns
NO.
SYMBOLS
PARAMETER
STK22C48-25
STK22C48-45
UNITS
#1
#2
Alt.
MIN
MAX
MIN
MAX
12
tAVAV
tAVAV
tWC
Write Cycle Time
25
45
ns
13
tWLWH
tWLEH
tWP
Write Pulse Width
20
30
ns
DATA VALID
5
tAXQX
3
tAVQV
DQ (DATA OUT)
ADDRESS
2
tAVAV
6
tELQX
STANDBY
DATA VALID
8
tGLQX
4
tGLQV
DQ (DATA OUT)
E
ADDRESS
2
tAVAV
G
ICC
ACTIVE
1
tELQV
10
tELICCH
11
tEHICCL
7
tEHQZ
9
tGHQZ


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