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TC429 Fiches technique(PDF) 3 Page - Microchip Technology |
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TC429 Fiches technique(HTML) 3 Page - Microchip Technology |
3 / 18 page 2003 Microchip Technology Inc. DS21416C-page 3 TC429 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † Supply Voltage .....................................................+20V Input Voltage, Any Terminal ................................... VDD + 0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) PDIP ............................................................ 730 mW CERDIP ....................................................... 800 mW SOIC............................................................ 470 mW Storage Temperature Range.............. -65°C to +150°C Maximum Junction Temperature, TJ ............... +150°C † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. PIN FUNCTION TABLE DC ELECTRICAL CHARACTERISTICS Symbol Description VDD Supply input, 7V to 18V INPUT Control input. TTL/CMOS compatible logic input NC No connection GND Ground GND Ground OUTPUT CMOS push-pull, common to pin 7 OUTPUT CMOS push-pull, common to pin 6 VDD Supply input, 7V to 18V Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V ≤ VDD ≤ 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1.3 0.8 V Input Current IIN -10 — 10 µA 0V ≤ VIN ≤ VDD Output High Output Voltage VOH VDD – 0.025 — — V Low Output Voltage VOL —— 0.025 V Output Resistance RO —1.8 2.5 Ω VIN = 0.8V, VOUT = 10 mA, VDD = 18V —1.5 2.5 VIN = 2.4V, VOUT = 10 mA, VDD = 18V Peak Output Current IPK —6.0 — A VDD = 18V, Figure 4-4 Latch-Up Protection Withstand Reverse Current IREV — 0.5 — A Duty cycle ≤ 2%, t ≤ 300 µsec, VDD = 16V Switching Time (Note 1) Rise Time tR —23 35 nsec CL = 2500 pF, Figure 4-1 Fall Time tF —25 35 nsec CL = 2500 pF, Figure 4-1 Delay Time tD1 —53 75 nsec Figure 4-1 Delay Time tD2 —60 75 nsec Figure 4-1 Power Supply Power Supply Current IS —3.5 5.0 mA VIN = 3V —0.3 0.5 VIN = 0V Note 1: Switching times ensured by design. |
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