IRF6668TRBF datasheet(4/9 Pages) IRF

No de pièce	IRF6668TRBF

Description	DirectFET Power MOSFET

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Fabricant	IRF [International Rectifier]

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IRF6668PbF

4

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Fig 5. Typical Output Characteristics

Fig 4. Typical Output Characteristics

Fig 6. Typical Transfer Characteristics

Fig 7. Normalized On-Resistance vs. Temperature

0.1

1

10

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

VGS

TOP

15V

10V

8.0V

7.0V

BOTTOM

6.0V

≤60µs PULSE WIDTH

Tj = 25°C

6.0V

0.1

1

10

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

6.0V

≤60µs PULSE WIDTH

Tj = 150°C

VGS

TOP

15V

10V

8.0V

7.0V

BOTTOM

6.0V

2

4

6

8

10

12

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

TJ = 150°C

TJ = 25°C

TJ = -40°C

VDS = 10V

≤60µs PULSE WIDTH

1

10

100

VDS, Drain-to-Source Voltage (V)

10

100

1000

10000

VGS = 0V,

f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Coss

Crss

Ciss

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 12A

VGS = 10V

Fig 9. Typical On-Resistance vs. Drain Current

0

20

40

60

80

100

ID, Drain Current (A)

0

10

20

30

40

50

60

TJ = 25°C

Vgs = 7.0V

Vgs = 8.0V

Vgs = 10V

Vgs = 15V

Fig 8. Typical Capacitance vs.Drain-to-Source Voltage

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