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TDA3609 Fiches technique(PDF) 9 Page - NXP Semiconductors |
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TDA3609 Fiches technique(HTML) 9 Page - NXP Semiconductors |
9 / 20 page 1997 Aug 15 9 Philips Semiconductors Preliminary specification Multiple voltage regulator with switch and ignition buffers TDA3609JR CHARACTERISTICS VP = 14.4 V; Tamb =25 °C; see Fig.7; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage operating 11 14.4 18 V regulator 2 on note 1 2.4 14.4 18 V jump start t ≤ 10 minutes −− 30 V load dump protection t ≤ 50 ms; tr ≥ 2.5 ms −− 50 V Iq quiescent supply current VP = 12.4 V; note 2; IREG2 = 0.1 mA − 500 600 µA VP = 14.4 V; note 2; IREG2 = 0.1 mA − 520 −µA Schmitt trigger power supply for switch, regulator 1 and regulator 3 Vthr rising threshold voltage 6.5 7.0 7.5 V Vthf falling threshold voltage 4.0 4.5 5.0 V Vhys hysteresis voltage 2.1 2.5 3.3 V Schmitt trigger for regulator 2 Vthr rising threshold voltage 6.0 6.5 7.1 V Vthf falling threshold voltage 1.7 1.9 2.2 V Vhys hysteresis voltage − 4.6 − V Schmitt trigger for enable input (regulator 1, regulator 3 and switch) Vthr rising threshold voltage 1.7 2.2 2.7 V Vthf falling threshold voltage 1.5 2.0 2.5 V Vhys hysteresis voltage IREG =Isw = 1 mA 0.1 0.2 0.5 V ILI input leakage current Ven =5V 1 5 10 µA Reset trigger level Vthr rising threshold voltage of regulator 2 VP rising; IREG1 =50mA; note 3 4.5 VREG2 − 0.15 VREG2 − 0.1 V Schmitt trigger for hold Vthr rising threshold voltage of regulator 1 VP rising; note 3 − VREG1 − 0.15 VREG1 − 0.075 V Vthf falling threshold voltage of regulator 1 VP falling; note 3 9.2 VREG1 − 0.35 − V Vhys hysteresis voltage 0.1 0.2 0.3 V Reset and hold buffer IsinkL LOW-level sink current VRES/HOLD ≤ 0.8 V 2 −− mA ILO output leakage current VP = 14.4 V; VRES/HOLD =5V − 0.1 5 µA rise time note 4 − 750 µs fall time note 4 − 150 µs |
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