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N04Q1618C2B Datasheet(Fiches technique) 1 Page - AMI SEMICONDUCTOR

Numéro de pièce N04Q1618C2B
Description  4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
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Fabricant  AMI [AMI SEMICONDUCTOR]
Site Internet  http://www.amis.com
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N04Q1618C2B
Stock No. 23451-D 11/06
1
The specification is ADVANCE INFORMATION and subject to change without notice.
Advance Information
AMI Semiconductor, Inc.
ULP Memory Solutions
670 North McCarthy Blvd. Suite 220
Milpitas, CA 95035
PH: 408-935-7777, FAX: 408-935-7770
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using AMI
Semiconductor’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0oC
to +70oC for the lowest power and is also available
in the industrial range of -40oC to +85oC. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Features
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Product Options
Part Number
Typical
Standby
Current
Vcc
(V)
VccQ
(V)
Speed
(nS)
Typical
Operating Current
Operating
Temperature
N04Q1612C2Bx-15C1
50nA
1.2
1.2, 1.8, 3.0
150ns
0.4 mA @ 1MHz
0oC to +70oC
N04Q1618C2Bx-15C1
50nA
1.8
1.8, 3.0
150ns
0.4 mA @ 1MHz
N04Q1618C2Bx-70C
200nA
70ns
0.6 mA @ 1MHz
N04Q1618C2Bx-85C
200nA
85ns
0.6 mA @ 1MHz
1. Part numbers are under development. Please contact your local sales representative for details.




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